Intepro Systems

SemTest Power Semiconductor Reliability ATE

Power-semiconductor reliability ATE for SiC and IGBT qualification — high-voltage bias held across a lot of devices for the full stress duration, with per-device leakage monitoring.

SemTest Power Semiconductor Reliability ATE — product photograph

Output

Output voltageup to 1200V
Output currentup to 1000A

Models

Part numbers in crawlable text — searchable, linkable, and quotable by model.

Part numberPowerPhaseInputMax input current
SemTest HT80

Capabilities

  • Individual DUT control and measurement — per-DUT current monitoring cuts supply voltage on limit while all other DUTs continue testing
  • Automated reversal of high-voltage supply polarity within a test routine, without turning the tester off
  • Testing to JEDEC standard for IGBT, MOSFET, SCR, Diode and Bipolar parts and modules, including SiC devices
  • Each 6U FSD module controls up to 8 DUT Test Cells; 10 FSD Modules per HT80 system, expandable in blocks of 80 DUT to 160, 240, 320
  • HTRB and HTGB stress testing; operational modes include linear, switched, saturated, voltage breakdown and avalanche
  • Temperature chamber rated at 60 to 225°C, +/-2°C with LN2 cooling; DUT temperature range from -40°C to +180°
  • Electrical stresses removed within 30msec when a DUT starts to fail, preserving the part for failure mode analysis
  • Test results written to an SQL Database for analysis and traceability

What it is bought for

Each of these sets out the bus, the clause and where programmes get caught out.

Further reading

Every figure on this page is transcribed from Intepro-SEMTest-automated-test-system_R4.pdf. A build gate re-checks each one against that document and fails the build if it is not there.