SemTest Power Semiconductor Reliability ATE
Power-semiconductor reliability ATE for SiC and IGBT qualification — high-voltage bias held across a lot of devices for the full stress duration, with per-device leakage monitoring.
Output
| Output voltage | up to 1200V |
|---|---|
| Output current | up to 1000A |
Models
Part numbers in crawlable text — searchable, linkable, and quotable by model.
| Part number | Power | Phase | Input | Max input current |
|---|---|---|---|---|
| SemTest HT80 | — | — | — | — |
Capabilities
- Individual DUT control and measurement — per-DUT current monitoring cuts supply voltage on limit while all other DUTs continue testing
- Automated reversal of high-voltage supply polarity within a test routine, without turning the tester off
- Testing to JEDEC standard for IGBT, MOSFET, SCR, Diode and Bipolar parts and modules, including SiC devices
- Each 6U FSD module controls up to 8 DUT Test Cells; 10 FSD Modules per HT80 system, expandable in blocks of 80 DUT to 160, 240, 320
- HTRB and HTGB stress testing; operational modes include linear, switched, saturated, voltage breakdown and avalanche
- Temperature chamber rated at 60 to 225°C, +/-2°C with LN2 cooling; DUT temperature range from -40°C to +180°
- Electrical stresses removed within 30msec when a DUT starts to fail, preserving the part for failure mode analysis
- Test results written to an SQL Database for analysis and traceability
What it is bought for
Each of these sets out the bus, the clause and where programmes get caught out.
Further reading
Every figure on this page is transcribed from Intepro-SEMTest-automated-test-system_R4.pdf. A build gate re-checks each one against that document and fails the build if it is not there.
